Rashba spin-orbit coupling probed by the weak antilocalization analysis in InAlAs/InGaAs/InAlAs quantum wells as a function of quantum well asymmetry.

نویسندگان

  • Takaaki Koga
  • Junsaku Nitta
  • Tatsushi Akazaki
  • Hideaki Takayanagi
چکیده

We have investigated the values of the Rashba spin-orbit coupling constant alpha in In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As quantum wells using the weak antilocalization (WAL) analysis as a function of the structural inversion asymmetry (SIA) of the quantum wells. We have found that the deduced alpha values have a strong correlation with the degree of SIA of the quantum wells as predicted theoretically. The good agreement between the theoretical and experimental values of alpha suggests that our WAL approach for deducing alpha values provides a useful tool in designing future spintronics devices that utilize the Rashba spin-orbit coupling.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Beating Analysis of Shubnikov de Haas Oscillation in In0.53Ga0.47As Double Quantum Well toward Spin Filter Applications

We recently determined the values of intrinsic spin-orbit (SO) parameters for In0.52Al0.48As/In0.53Ga0.47As(10 nm)/In0.52Al0.48As (InGaAs/InAlAs) quantum wells (QW), lattice-matched to (001) InP, from the weak localization/antilocalization analysis of the low-temperature magneto-conductivity measurements [1]. We have then studied the subband energy spectra for the InGaAs/InAlAs double QW system...

متن کامل

Beating Analysis of Shubnikov de Haas Oscillation in Ino;s3Gao.47As Double Quantum Well toward Spin Filter Applications

SUMMARY We recently determined the values of intrinsic spin-orbit (SO) parameters for Ino.s2Alo.48As(In0.53Ga0.47As(lO nm)(Ino.s2Alo.48AS (InGaAs(InAlAs) quantum wells (QW), lattice-matched to (00l) InP, from the weak localizationjantilocalization analysis of the low-temperature magneto-conductivity measurements [1]. We have then studied the sub-band energy spectra for the InGaAs(InAlAs double ...

متن کامل

Spin-orbit Splittings in Si/SiGe Quantum Wells: From Ideal Si Membranes to Realistic Hterostructures

We present a calculation of the wavevector-dependent subband level splitting from spin-orbit coupling in Si/SiGe quantum wells. We first use the effective-mass approach, where the splittings are parameterized by separating contributions from the Rashba and Dresselhaus terms. We then determine the inversion asymmetry parameters by fitting tight-binding numerical results obtained using the quanti...

متن کامل

Quantum Interference Control of Ballistic Magneto- resistance in a Magnetic Nanowire Containing Two Atomic- Size Domain Walls

The magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. The magnetoresistance is calculated in the ballistic regime, within the Landauer-Büttiker formalism. It has been demonstrated that the conductance of a magnetic nanowire with double domain walls...

متن کامل

Spin-Hall transport of heavy holes in III-V semiconductor quantum wells

We investigate spin transport of heavy holes in III-V semiconductor quantum wells in the presence of spin-orbit coupling of the Rashba type due to structure-inversion asymmetry. Similarly to the case of electrons, the longitudinal spin conductivity vanishes, whereas the off-diagonal elements of the spin-conductivity tensor are finite giving rise to an intrinsic spin-Hall effect. For a clean sys...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Physical review letters

دوره 89 4  شماره 

صفحات  -

تاریخ انتشار 2002